发明授权
- 专利标题: Negative resist composition and patterning process using the same
- 专利标题(中): 负光刻胶组合物和使用其的图案化工艺
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申请号: US11808706申请日: 2007-06-12
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公开(公告)号: US07655378B2公开(公告)日: 2010-02-02
- 发明人: Jun Hatakeyama , Takanobu Takeda
- 申请人: Jun Hatakeyama , Takanobu Takeda
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP2006-200957 20060724
- 主分类号: G03F7/038
- IPC分类号: G03F7/038 ; G03F7/004 ; G03F7/20 ; G03F7/30
摘要:
There is disclosed a negative resist composition comprising, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by the following general formula (1). There can be provided a negative resist composition, in particular, a chemically amplified negative resist composition that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist composition.
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