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公开(公告)号：US07887991B2
公开(公告)日：2011-02-15
申请号：US12320265
申请日：2009-01-22
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： The present invention provides a polymer, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance, suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).
摘要翻译： 本发明提供一种聚合物，其具有高灵敏度，高分辨率，曝光后良好的图案构造，另外具有优异的抗蚀刻性，适合作为正性抗蚀剂组合物的基础树脂，特别是用于化学放大阳性 抗蚀剂组成; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。 本发明的正型抗蚀剂组合物的特征在于，至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式（1）表示的酸不稳定基团取代的聚合物。
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公开(公告)号：US07655378B2
公开(公告)日：2010-02-02
申请号：US11808706
申请日：2007-06-12
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
CPC分类号： G03F7/0382 , C08F220/26 , C08F220/28 , C08F220/38 , Y10S430/106 , Y10S430/108
摘要： There is disclosed a negative resist composition comprising, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by the following general formula (1). There can be provided a negative resist composition, in particular, a chemically amplified negative resist composition that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist composition.
摘要翻译： 公开了一种负性抗蚀剂组合物，其包含至少包含由以下通式（1）表示的羟基乙烯基萘的重复单元的聚合物。 可以提供负的抗蚀剂组合物，特别是化学放大的负性抗蚀剂组合物，其可以表现出比常规羟基苯乙烯或酚醛清漆阴性抗蚀剂组合物更高的分辨率，其在曝光后提供优异的图案轮廓并且表现出优异的耐蚀刻性; 以及使用抗蚀剂组合物的图案化工艺。
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公开(公告)号：US20090202947A1
公开(公告)日：2009-08-13
申请号：US12320266
申请日：2009-01-22
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： The present invention provides a polymer suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).
摘要翻译： 本发明提供了适合作为正型抗蚀剂组合物的基础树脂的聚合物，特别是用于具有高灵敏度，高分辨率，曝光后的良好图案构造的化学增幅正性抗蚀剂组合物的基础树脂，另外还具有优异的蚀刻 抵抗性; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。 本发明的正型抗蚀剂组合物的特征在于，至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式（1）表示的酸不稳定基团取代的聚合物。
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公开(公告)号：US07476486B2
公开(公告)日：2009-01-13
申请号：US11354128
申请日：2006-02-15
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
CPC分类号： G03F7/0392 , B82Y30/00 , G03F7/0382
摘要： A resist composition comprising a fullerene having five phenol derivatives is provided.
摘要翻译： 提供了包含具有五个苯酚衍生物的富勒烯的抗蚀剂组合物。
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公开(公告)号：US07449277B2
公开(公告)日：2008-11-11
申请号：US11523792
申请日：2006-09-20
申请人： Jun Hatakeyama , Takeshi Nagata , Takanobu Takeda
发明人： Jun Hatakeyama , Takeshi Nagata , Takanobu Takeda
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F220/30 , G03F7/0046 , Y10S430/108
摘要： A polymer is obtained from (meth)acrylate having a bridged ring lactone group, (meth)acrylate having an acid-labile leaving group, and (meth)acrylate having a hydroxynaphthyl pendant. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development, and leaves minimal residues following development.
摘要翻译： 聚合物得自具有桥环内酯基的（甲基）丙烯酸酯，具有酸不稳定离去基的（甲基）丙烯酸酯和具有羟基萘基侧基的（甲基）丙烯酸酯。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影期间的受控膨胀引起的最小线边缘粗糙度，并且在显影后留下最少残留物 。
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公开(公告)号：US20080038662A1
公开(公告)日：2008-02-14
申请号：US11822805
申请日：2007-07-10
申请人： Jun Hatakeyama , Toshihiko Fujii , Takanobu Takeda
发明人： Jun Hatakeyama , Toshihiko Fujii , Takanobu Takeda
CPC分类号： G03F7/091
摘要： There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.
摘要翻译： 公开了用于光刻的多层抗蚀剂膜的底部抗蚀剂层组合物，其包含至少包含由以下通式（1）表示的重复单元的聚合物。 因此，可以提供一种底部抗蚀剂层组合物，其在暴露于较短波长时表现出最佳n值和k值，在蚀刻基板的条件下具有优异的耐蚀刻性，并且有希望形成用于多层抗蚀剂工艺的底部抗蚀剂层 例如含硅双层抗蚀剂工艺或使用含硅中间抗蚀剂层的三层抗蚀剂工艺。
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公开(公告)号：US07232638B2
公开(公告)日：2007-06-19
申请号：US10427939
申请日：2003-05-02
IPC分类号： G03F7/004
CPC分类号： G03F7/0758 , G03F7/0397
摘要： Chemically amplified positive resist compositions comprising a polymer obtained by copolymerizing a silicon-containing monomer with a polar monomer having a value of LogP or cLogP of up to 0.6 and optionally hydroxystyrene, a photoacid generator and an organic solvent are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.
摘要翻译： 包含通过使含硅单体与LogP或cLogP值高达0.6的极性单体和任选的羟基苯乙烯，光酸产生剂和有机溶剂共聚获得的聚合物的化学扩增的正性抗蚀剂组合物对高能辐射敏感， 在小于300nm的波长下具有高灵敏度和分辨率，并且改善了耐氧等离子体蚀刻的耐受性。
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公开(公告)号：US07135269B2
公开(公告)日：2006-11-14
申请号：US10765919
申请日：2004-01-29
申请人： Jun Hatakeyama , Takanobu Takeda , Osamu Watanabe
发明人： Jun Hatakeyama , Takanobu Takeda , Osamu Watanabe
CPC分类号： G03F7/0395 , C08F220/28 , C08F222/20 , C08F230/08 , C08F232/08 , G03F7/0397 , G03F7/0758
摘要： A polymer comprising recurring units containing silicon and recurring units having a substituent group of formula (1) is novel wherein A1 is a divalent group selected from furandiyl, tetrahydrofurandiyl and oxanorbornanediyl, R1 and R2 are selected from monovalent C1–C10 hydrocarbon groups, or R1 and R2 taken together may form an aliphatic hydrocarbon ring with the carbon atom, and R3 is hydrogen or a monovalent C1–C10 hydrocarbon group which may contain a hetero atom. The polymer is useful as a base resin to formulate a resist composition which is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength of less than 300 nm as well as satisfactory oxygen plasma etching resistance.
摘要翻译： 含有硅的重复单元和具有式（1）的取代基的重复单元的聚合物是新颖的，其中A 1是选自呋喃二基，四氢呋喃基和氧杂甘露二烷基的二价基团，R 1， SUP>和R 2选自单价C 1 -C 10烃基或R 1和R 2 一起可以与碳原子一起形成脂族烃环，R 3是氢或一价C 1 -C 1 - 10个可以含有杂原子的烃基。 聚合物可用作基础树脂以配制对高能辐射敏感的抗蚀剂组合物，并且在小于300nm的波长下具有优异的灵敏度和分辨率以及满意的氧等离子体耐蚀刻性。
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公开(公告)号：US20060188809A1
公开(公告)日：2006-08-24
申请号：US11354128
申请日：2006-02-15
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , B82Y30/00 , G03F7/0382
摘要： A resist composition comprising a fullerene having five phenol derivatives is provided.
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公开(公告)号：US06994945B2
公开(公告)日：2006-02-07
申请号：US10085935
申请日：2002-03-01
CPC分类号： C08G77/04 , C08F230/08 , G03F7/0045 , G03F7/0758 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115 , C08F222/06 , C08F2220/185 , C08F214/06 , C08F220/18 , C08F222/40 , C08F214/26
摘要： Novel silicon-containing polymers are obtained by copolymerizing a vinylsilane monomer with a compound having a low electron density unsaturated bond such as maleic anhydride, maleimide derivatives or tetrafluoroethylene. Using the polymers, chemical amplification positive resist compositions sensitive to high-energy radiation and having a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching are obtained.
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