Invention Grant
US07655555B2 In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability
有权
在扩散阻挡材料沉积中Si的原位共沉积，具有改善的润湿性，阻隔效率和器件可靠性
- Patent Title: In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability
- Patent Title (中): 在扩散阻挡材料沉积中Si的原位共沉积，具有改善的润湿性，阻隔效率和器件可靠性
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Application No.: US09895520Application Date: 2001-06-28
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Publication No.: US07655555B2Publication Date: 2010-02-02
- Inventor: Richard A. Faust , Qing-Tang Jiang , Jiong-Ping Lu
- Applicant: Richard A. Faust , Qing-Tang Jiang , Jiong-Ping Lu
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L21/28
Abstract:
A copper interconnect having a transition metal-silicon-nitride barrier (106). A transition metal-nitride is co-deposited with Si by reactive sputtering in a Si containing ambient to form barrier (106). The copper (110) is then deposited over the transition metal-silicon-nitride barrier (108) with good adhesion.
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