Invention Grant
- Patent Title: InN/InP/TiO2 photosensitized electrode
- Patent Title (中): InN / InP / TiO2光敏电极
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Application No.: US11586000Application Date: 2006-10-25
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Publication No.: US07655575B2Publication Date: 2010-02-02
- Inventor: Ming-Chang Lin , Yen-Chang Tzeng , Shan-Ming Lan , Chi-Shen Lee , Tsun-Neng Yang , Tsong-Yang Wei , Jyh-Perng Chiu , Li-Fu Lin , Der-Jhy Shieh , Ming-Chao Kuo
- Applicant: Ming-Chang Lin , Yen-Chang Tzeng , Shan-Ming Lan , Chi-Shen Lee , Tsun-Neng Yang , Tsong-Yang Wei , Jyh-Perng Chiu , Li-Fu Lin , Der-Jhy Shieh , Ming-Chao Kuo
- Applicant Address: TW Taoyuan
- Assignee: Atomic Energy Council - Institute of Nuclear Energy Research
- Current Assignee: Atomic Energy Council - Institute of Nuclear Energy Research
- Current Assignee Address: TW Taoyuan
- Priority: TW95107062A 20060302
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.
Public/Granted literature
- US20070204905A1 InN/InP/TiO2 photosensitized electrode Public/Granted day:2007-09-06
Information query
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