Invention Grant
- Patent Title: Photodetector for backside-illuminated sensor
- Patent Title (中): 背面照明传感器的光电探测器
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Application No.: US11753480Application Date: 2007-05-24
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Publication No.: US07656000B2Publication Date: 2010-02-02
- Inventor: Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
- Applicant: Tzu-Hsuan Hsu , Dun-Nian Yaung , Ching-Chun Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/062
Abstract:
A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a gate that includes a reflective layer.
Public/Granted literature
- US20080290441A1 PHOTODETECTOR FOR BACKSIDE-ILLUMINATED SENSOR Public/Granted day:2008-11-27
Information query
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