Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
-
Application No.: US11404033Application Date: 2006-04-13
-
Publication No.: US07656210B2Publication Date: 2010-02-02
- Inventor: Hiroshi Seki , Hideyuki Kakubari , Hiroshi Tokiwai
- Applicant: Hiroshi Seki , Hideyuki Kakubari , Hiroshi Tokiwai
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-116749 20050414
- Main IPC: H03K3/03
- IPC: H03K3/03

Abstract:
A semiconductor integrated circuit that operates on multiple supply potentials including a first potential and a second potential that is higher than the first potential. The semiconductor integrated circuit includes a potential-lowering circuit operating on the second supply potential and including an N-channel MOS transistor that lowers the second supply potential applied to a gate thereof to output a lowered potential from a source thereof, a judging circuit operating on the potential outputted from the potential-lowering circuit and judging whether the first supply potential is high-level or low-level, and a buffer circuit outputting a control signal showing whether the first supply potential is fed based on judgment outputted from the judging circuit.
Public/Granted literature
- US20060232320A1 Semiconductor integrated circuit Public/Granted day:2006-10-19
Information query
IPC分类: