发明授权
US07656742B2 Circuit and method for sampling valid command using extended valid address window in double pumped address scheme memory device
有权
在双泵浦地址方案存储器件中使用扩展有效地址窗口采样有效命令的电路和方法
- 专利标题: Circuit and method for sampling valid command using extended valid address window in double pumped address scheme memory device
- 专利标题(中): 在双泵浦地址方案存储器件中使用扩展有效地址窗口采样有效命令的电路和方法
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申请号: US12128464申请日: 2008-05-28
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公开(公告)号: US07656742B2公开(公告)日: 2010-02-02
- 发明人: Hyun-Jin Kim , Seong-Jin Jang , Jeong-Don Lim , Kwang-Il Park , Ho-Young Song , Woo-Jin Lee
- 申请人: Hyun-Jin Kim , Seong-Jin Jang , Jeong-Don Lim , Kwang-Il Park , Ho-Young Song , Woo-Jin Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR2005-0111418 20051121
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
Provided are a circuit and method for sampling a valid command using a valid address window extended for a high-speed operation in a double pumped address scheme memory device. A method for extending the valid address window includes: inputting a valid command signal and a first address signal at the first cycle of a clock signal; inputting a second address signal at the second cycle of the clock signal; generating a decoded command signal and extended first and second internal address signals respectively in response to the command signal and the address signals; and latching and decoding the extended first and second internal address signals in response to the decoded command signal.
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