发明授权
- 专利标题： Localized biasing for silicon on insulator structures
- 专利标题（中）： 硅绝缘体结构的局部偏置
-
申请号： US10930001申请日： 2004-08-30
-
公开(公告)号： US07659152B2公开(公告)日： 2010-02-09
- 发明人: Fernando Gonzalez , John K. Zahurak
- 申请人： Fernando Gonzalez , John K. Zahurak
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg & Woessner, P.A.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing signal to distinct regions of the silicon layer of the SOI. The conductor is recessed into the insulator layer to provide a substantially planar interface with the silicon layer. The conductor is connected to a bias voltage source. In an embodiment, a plurality of conductor is provided that respectively connected to a plurality of voltage sources. Thus, different regions of the silicon layer are biased by different bias signals.
公开/授权文献
- US20050032284A1 Localized biasing for silicon on insulator structures 公开/授权日：2005-02-10
信息查询
IPC分类:
