Methods and devices for programming control information perform a lower-speed programming of a given cell type in a first area of memory array, confirm a result of the lower-speed programming of the given cell type in the first area of memory array, and perform a higher-speed programming of the given cell type in a second area of memory array after confirming the result of the lower-speed programming. An initial programming voltage of the higher-speed programming may be different from that of the lower-speed programming. The first programming may be a lower-speed operation, such as the writing of data, and the second programming may be a higher-speed operation, such as the writing of control information.