- Patent Title: Split transfer gate for dark current suppression in an imager pixel
-
Application No.: US11019232Application Date: 2004-12-23
-
Publication No.: US07663167B2Publication Date: 2010-02-16
- Inventor: John Ladd
- Applicant: John Ladd
- Applicant Address: KY Grand Cayman
- Assignee: Aptina Imaging Corp.
- Current Assignee: Aptina Imaging Corp.
- Current Assignee Address: KY Grand Cayman
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/113
- IPC: H01L31/113 ; H01L31/062

Abstract:
A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.
Public/Granted literature
- US20060138581A1 Split transfer gate for dark current suppression in an imager pixel Public/Granted day:2006-06-29
Information query
IPC分类: