Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11978370Application Date: 2007-10-29
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Publication No.: US07663219B2Publication Date: 2010-02-16
- Inventor: Hyo-Jae Bang , Heui-Seog Kim , Dong-Chun Lee , Seong-Chan Han , Jung-Hyeon Kim
- Applicant: Hyo-Jae Bang , Heui-Seog Kim , Dong-Chun Lee , Seong-Chan Han , Jung-Hyeon Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2006-0110766 20061110
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes a semiconductor package, a circuit board and an interval maintaining member. The semiconductor package has a body and a lead protruded from the body. The circuit board has a first land electrically connected to the lead. The interval maintaining member is interposed between the circuit board and the body. The interval maintaining member maintains an interval between the lead and the first land. Thus, an interval between the lead and the land is uniformly maintained, so that a thermal and/or mechanical reliability of the semiconductor device is improved.
Public/Granted literature
- US20080111235A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-05-15
Information query
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