发明授权
- 专利标题： Introducing nanotubes in trenches and structures formed thereby
- 专利标题（中）： 在由此形成的沟槽和结构中引入纳米管
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申请号： US11026320申请日： 2004-12-29
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公开(公告)号： US07666465B2公开(公告)日： 2010-02-23
- 发明人: Paul B. Fischer , Anne E. Miller , Kenneth C. Cadien , Chris E. Barns
- 申请人： Paul B. Fischer , Anne E. Miller , Kenneth C. Cadien , Chris E. Barns
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Kathy J. Ortiz
- 主分类号： B05D1/00
- IPC分类号： B05D1/00 ; B05D1/04
摘要：
Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a substrate comprising at least one opening, and then applying a nanotube slurry comprising at least one nanotube to the substrate, wherein the at least one nanotube is substantially placed within the at least one opening.
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