Invention Grant
- Patent Title: Apparatus and method of gas injection sequencing
- Patent Title (中): 气体喷射测序的装置和方法
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Application No.: US11746779Application Date: 2007-05-10
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Publication No.: US07666479B2Publication Date: 2010-02-23
- Inventor: Eric J. Strang
- Applicant: Eric J. Strang
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/52 ; C23F1/00 ; H01L21/306 ; H05H1/24 ; C23C16/06 ; C23C16/22

Abstract:
An apparatus and method for gas injection sequencing in order to increase the gas injection total pressure while satisfying an upper limit to the process gas flow rate, thereby achieving gas flow uniformity during a sequence cycle and employing practical orifice configurations. The gas injection system includes a gas injection electrode having a plurality of regions, through which process gas flows into the process chamber. The gas injection system further includes a plurality of gas injection plenums, each independently coupled to one of the aforesaid regions and a plurality of gas valves having an inlet end and an outlet end, where the outlet end is independently coupled to one of the aforesaid plurality of gas injection plenums. The gas injection system includes a controller coupled to the plurality of gas valves for sequencing the flow of process gas through the aforesaid plurality of regions.
Public/Granted literature
- US20070204907A1 APPARATUS AND METHOD OF GAS INJECTION SEQUENCING Public/Granted day:2007-09-06
Information query
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