Invention Grant
- Patent Title: Method for fabricating a microstructure
- Patent Title (中): 微结构制造方法
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Application No.: US11946831Application Date: 2007-11-28
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Publication No.: US07666702B2Publication Date: 2010-02-23
- Inventor: Sheng-Hung Li , Siew-Seong Tan , Cheng-Yen Liu , Li-Ken Yeh
- Applicant: Sheng-Hung Li , Siew-Seong Tan , Cheng-Yen Liu , Li-Ken Yeh
- Applicant Address: TW Hsinchu
- Assignee: MEMSmart Semiconductor Corp.
- Current Assignee: MEMSmart Semiconductor Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Shia, Banger
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/4763 ; G02B26/00

Abstract:
A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.
Public/Granted literature
- US20090137113A1 Method for fabricating a Microstructure Public/Granted day:2009-05-28
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