公开(公告)号：US20100109121A1

公开(公告)日：2010-05-06

申请号：US12652736

申请日：2010-01-05

Applicant: Li-Ken YEH ,  I-Hsiang CHIU

Inventor： Li-Ken YEH ,  I-Hsiang CHIU

IPC: H01L29/00

CPC classification number: B81C1/00246 ,  B81C2203/0728

Abstract: A micro electromechanical system and a fabrication method thereof, which has trenches formed on a substrate to prevent circuits from interfering each other, and to prevent over-etching of the substrate when releasing a microstructure.

Abstract translation: 一种微机电系统及其制造方法，其具有形成在基板上的沟槽，以防止电路彼此干扰，并且在释放微结构时防止基板过度蚀刻。

公开(公告)号：US07935556B2

公开(公告)日：2011-05-03

申请号：US11845780

申请日：2007-08-27

Applicant: Li-Ken Yeh ,  I-Hsiang Chiu

Inventor： Li-Ken Yeh ,  I-Hsiang Chiu

IPC: H01L21/00

CPC classification number: B81C1/00246 ,  B81C2203/0728

Abstract: A micro electromechanical system and a fabrication method thereof, which has trenches formed on a substrate to prevent circuits from interfering each other, and to prevent over-etching of the substrate when releasing a microstructure.

Abstract translation: 一种微机电系统及其制造方法，其具有形成在基板上的沟槽，以防止电路彼此干扰，并且在释放微结构时防止基板过度蚀刻。

公开(公告)号：US07863063B2

公开(公告)日：2011-01-04

申请号：US12042289

申请日：2008-03-04

Applicant: Siew-Seong Tan

Inventor： Siew-Seong Tan

IPC: H01L21/00

CPC classification number: B81C1/00333 ,  B81C1/00047 ,  B81C1/00896 ,  B81C2203/0136

Abstract: A method for fabricating a sealed cavity microstructure comprises the steps of: forming an insulation layer with a micro-electro-mechanical structure on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one suspended structure and at least one conductive structure between which is disposed a spacer region; after an etching, filling a sacrificial layer into the spacer region and on the surface of the conductive structure; forming holes in the sacrificial layer correspondingly to the conductive structure; depositing a cap layer into the holes and the surface; after removing the sacrificial layer, utilizing the clearance of the cap layer to carry out a further etching to realize the suspension of the micro-electro-mechanical structure; and finally, utilizing a sealing layer to achieve the sealing effect. By such arrangements, the exposure of the micro-electro-mechanical structure can be effectively prevented, and the final package cost can be reduced.

Abstract translation: 用于制造密封腔微结构的方法包括以下步骤：在硅衬底的上表面上形成具有微机电结构的绝缘层，所述微机电结构至少包括一个悬挂结构，并且至少 一个导电结构在其间设置间隔区; 在蚀刻之后，将牺牲层填充到间隔区域和导电结构的表面上; 对应于导电结构在牺牲层中形成孔; 将盖层沉积到孔和表面中; 在去除牺牲层之后，利用盖层的间隙进行进一步蚀刻以实现微机电结构的悬浮; 最后利用密封层实现密封效果。 通过这样的布置，可以有效地防止微电子机械结构的暴露，并且可以降低最终的封装成本。

公开(公告)号：US07666702B2

公开(公告)日：2010-02-23

申请号：US11946831

申请日：2007-11-28

Applicant: Sheng-Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

Inventor： Sheng-Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

IPC: H01L21/00 ,  H01L21/4763 ,  G02B26/00

CPC classification number: B81C1/00801 ,  B81C2201/0107 ,  B81C2201/014

Abstract: A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.

Abstract translation: 用于制造微结构的方法是在硅衬底的上表面上形成包括微​​电子机械结构的至少一个绝缘层。 微电子机械结构包括彼此独立的至少一个微结构和金属牺牲结构。 在金属牺牲结构中形成多个金属层和连接到各个金属层的多个金属通孔层。 在绝缘层的上表面上形成阻挡层，随后在硅衬底的下表面上形成蚀刻停止层。 从硅衬底的下表面进行蚀刻操作以形成与微电子机械结构相对应的空间，然后蚀刻金属牺牲结构，从而实现微结构悬浮。