Invention Grant
- Patent Title: Through-die metal vias with a dispersed phase of graphitic structures of carbon for reduced thermal expansion and increased electrical conductance
- Patent Title (中): 具有分散相的石墨结构碳的通孔金属通孔用于减少热膨胀和增加的电导
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Application No.: US11541112Application Date: 2006-09-29
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Publication No.: US07666768B2Publication Date: 2010-02-23
- Inventor: Nachiket R. Raravikar , Daewoong Suh , Leonel Arana , James C. Matayabas, Jr.
- Applicant: Nachiket R. Raravikar , Daewoong Suh , Leonel Arana , James C. Matayabas, Jr.
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kenneth A. Nelson
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method, apparatus and various material-architectures in an electrically conductive through die via formed of a composite material with a continuous phase of matrix metal and a dispersed phase of graphitic structures of carbon, wherein bulk material properties of the composite material differ from similar bulk material properties of the matrix metal.
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