发明授权
- 专利标题： Field programmable gate array (FPGA) multi-parallel structure
- 专利标题（中）： 现场可编程门阵列（FPGA）多并联结构
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申请号： US11644835申请日： 2006-12-26
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公开(公告)号： US07667246B2公开(公告)日： 2010-02-23
- 发明人: Kee Yong Kim
- 申请人： Kee Yong Kim
- 申请人地址： KR Seoul
- 专利权人： Dongbu Electronics Co., Ltd.
- 当前专利权人： Dongbu Electronics Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 优先权： KR10-2005-0133103 20051229
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
A method of forming a field programmable gate array (FPGA) structure of a semiconductor device capable of reducing manufacturing cost through simpler processes includes forming a contact parallel connection structure in which contacts connected to a gate electrode and a source/drain by way of a first amorphous silicon pattern are connected in parallel with each other; forming a via parallel connection structure in which vias, connected to neighboring metal interconnections by a second amorphous silicon pattern, are connected in parallel with each other at a position not overlapping the contact parallel connection structure; and forming a connection means for connecting the contact parallel connection structure to the via parallel connection structure.
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