发明授权
US07667297B2 Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
有权
用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件
- 专利标题: Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
- 专利标题(中): 用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件
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申请号: US11423026申请日: 2006-06-08
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公开(公告)号: US07667297B2公开(公告)日: 2010-02-23
- 发明人: Reiner Barthelmess , Anton Mauder , Franz Josef Niedernostheide , Hans-Joachim Schulze
- 申请人: Reiner Barthelmess , Anton Mauder , Franz Josef Niedernostheide , Hans-Joachim Schulze
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Coats & Bennett, P.L.L.C.
- 优先权: DE102005026408 20050608
- 主分类号: H01L29/167
- IPC分类号: H01L29/167 ; H01L29/30
摘要:
A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.