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1.发明授权Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，该半导体部件包括掩埋停止区域公开(公告)号：US07749876B2
公开(公告)日：2010-07-06
申请号：US12039173
申请日：2008-02-28
IPC分类号： H01L21/266
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要翻译： 根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 将半导体体暴露于含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。
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2.发明授权Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件公开(公告)号：US07667297B2
公开(公告)日：2010-02-23
申请号：US11423026
申请日：2006-06-08
IPC分类号： H01L29/167 , H01L29/30
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂， 半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的 温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。
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3.发明申请Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，所述半导体部件包括掩埋停止区域公开(公告)号：US20050280076A1
公开(公告)日：2005-12-22
申请号：US11083914
申请日：2005-03-18
IPC分类号： H01L29/08 , H01L29/32 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/868 , H01L29/76 , H01L21/8238
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.
摘要翻译： 一种用于在具有第一侧面和第二面的半导体本体的掺杂区域中制造阻挡区域的方法，包括以下方法步骤：将具有切口的掩模施加到半导体主体的一个侧面上，照射该侧面 具有质子辐射的掩模，进行热处理方法以在半导体本体中产生氢诱导的供体。
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4.发明授权Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件公开(公告)号：US08178411B2
公开(公告)日：2012-05-15
申请号：US12550483
申请日：2009-08-31
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。 该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。 该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体 在照射侧的方向上与第一区域相邻的区域。
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5.发明申请Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone 有权用于在半导体体中产生停止区域的方法和具有停止区域的半导体部件公开(公告)号：US20100015818A1
公开(公告)日：2010-01-21
申请号：US12550483
申请日：2009-08-31
IPC分类号： H01L21/263
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。 该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。 该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体 在照射侧的方向上与第一区域相邻的区域。
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6.发明申请Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone 有权用于制造半导体部件中的埋置停止区域的方法和包括埋设停止区域的半导体部件公开(公告)号：US20080160732A1
公开(公告)日：2008-07-03
申请号：US12039173
申请日：2008-02-28
IPC分类号： H01L21/266
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要翻译： 根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 半导体体暴露在含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。
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7.发明授权Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，所述半导体部件包括掩埋停止区域公开(公告)号：US07361970B2
公开(公告)日：2008-04-22
申请号：US11083914
申请日：2005-03-18
IPC分类号： H01L31/0248
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.
摘要翻译： 一种用于在具有第一侧面和第二面的半导体本体的掺杂区域中制造阻挡区域的方法，包括以下方法步骤：将具有切口的掩模施加到半导体主体的一个侧面上，照射该侧面 具有质子辐射的掩模，进行热处理方法以在半导体本体中产生氢诱导的供体。
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公开(公告)号：US20090140290A1
公开(公告)日：2009-06-04
申请号：US12324309
申请日：2008-11-26
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L27/0255 , H01L21/324 , H01L27/1027 , H01L29/0692 , H01L29/083 , H01L29/0834 , H01L29/0839 , H01L29/1012 , H01L29/1016 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66136 , H01L29/66363 , H01L29/7395 , H01L29/7428 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.
摘要翻译： 包括短路结构的半导体部件。 一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。 半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。 第一区域和第二区域耦合到高度导电的层。 第二导电类型的连接区域布置在第二区域和导电层之间。
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公开(公告)号：US20080173968A1
公开(公告)日：2008-07-24
申请号：US11969017
申请日：2008-01-03
IPC分类号： H01L29/861 , H01L21/225
CPC分类号： H01L29/861 , H01L21/263 , H01L21/3242 , H01L29/0661 , H01L29/36
摘要： A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
摘要翻译： 公开了二极管。 一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。 半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。 在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。
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公开(公告)号：US20060051923A1
公开(公告)日：2006-03-09
申请号：US11207525
申请日：2005-08-19
IPC分类号： H01L21/336
CPC分类号： H01L29/74 , H01L29/0619 , H01L29/7395
摘要： A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field zone arranged in an edge region of the semiconductor body is reduced in size by means of an etching method. In another embodiment, the semiconductor body is partially removed in a region outside the first semiconductor zone. At least one second semiconductor zone is then fabricated in the partially removed region.
摘要翻译： 一种制造半导体的方法以及具有半导体本体的半导体元件的至少一个第二半导体区域，该半导体元件具有第一半导体区域。 通过蚀刻方法将布置在半导体主体的边缘区域中的至少一个场区的尺寸减小。 在另一个实施例中，半导体主体在第一半导体区外部的部分被部分去除。 然后在部分去除的区域中制造至少一个第二半导体区。
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