发明授权
- 专利标题： Power semiconductor component, power semiconductor device as well as methods for their production
- 专利标题（中）： 功率半导体元件，功率半导体器件及其生产方法
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申请号： US11736999申请日： 2007-04-18
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公开(公告)号： US07667326B2公开(公告)日： 2010-02-23
- 发明人: Josef Hoeglauer , Ralf Otremba , Xaver Schloegel
- 申请人： Josef Hoeglauer , Ralf Otremba , Xaver Schloegel
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Banner & Witcoff, Ltd.
- 优先权： DE102006018765 20060420
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L29/40
摘要：
A power semiconductor component (2) has a semiconductor body with a front face (7) and a rear face (9). The front face (7) has a front-face metallization (8), which provides at least one first contact pad (11). A structured metal seed layer (14) is provided as the front-face metallization (8), is arranged directly on the semiconductor body, and has a thickness d, where 1 nm≦d≦0.5 μm.
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