Invention Grant
US07668220B2 Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
有权
使用具有中心缺陷的光子晶体的单模垂直腔表面发射激光器
- Patent Title: Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
- Patent Title (中): 使用具有中心缺陷的光子晶体的单模垂直腔表面发射激光器
-
Application No.: US12423791Application Date: 2009-04-14
-
Publication No.: US07668220B2Publication Date: 2010-02-23
- Inventor: Jan Lipson , Thomas Lenosky , Hongyu Deng
- Applicant: Jan Lipson , Thomas Lenosky , Hongyu Deng
- Applicant Address: US CA Sunnyvale
- Assignee: Finisar Corporation
- Current Assignee: Finisar Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Workman Nydegger
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.
Public/Granted literature
- US20090232176A1 Single Mode Vertical Cavity Surface Emitting Laser Using Photonic Crystals With A Central Defect Public/Granted day:2009-09-17
Information query