摘要:
A vertical cavity surface emitting laser (VCSEL) using photonic crystals. Photonic crystals are formed such that the active region of the VCSEL is bounded by the photonic crystals. The photonic crystals have a periodic cavity structure that reflects light of certain wavelengths through the active region of the VCSEL such that laser light at the wavelengths is generated. Additional photonic crystals can be formed to increase the bandwidth of the VCSEL. The photonic crystals can also be combined with distributed bragg reflector layers to form the mirrors of a VCSEL.
摘要:
Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.
摘要:
Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.
摘要:
A vertical cavity surface emitting laser (VCSEL) using photonic crystals with a central defect. At least one of the mirror layers of a VCSEL includes a photonic crystal with a central defect. The central defect, which is surrounded by a periodic structure of holes or cavities, permits laser light to propagate and exit the VCSEL. Semi-insulating regions are formed in the active region such that when cavities are drilled in the photonic crystal and penetrate the active region, the cavities pass through the semi-insulating regions. This reduces the surface recombination that would otherwise occur in the active region and prevents the threshold current from increasing. The photonic crystal with a central defect has a reflectivity that is wavelength dependent. The VCSEL thus emits a single mode.
摘要:
Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.
摘要:
A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with or without DBR layers. The photonic crystal, in one example, forms an external cavity.
摘要:
An edge emitting laser that emits a single mode using photonic mirrors. An edge emitting laser includes an active region that is formed between an n-type semiconductor material and a p-type semiconductor material. Photonic mirrors are formed in the laser to define a gain cavity and an external cavity. The gain cavity is bounded by a cleaved facet and a photonic mirror or by a pair of photonic mirrors. The external cavity is bounded by the photonic mirror of the gain cavity and either a cleaved facet or another photonic mirror. The mode emitted by the laser is determined by characteristics of the photonic mirrors, including the periodic cavity structures of the mirrors.
摘要:
A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with/without DBR layers. The photonic crystal, in one example, forms an external cavity.
摘要:
Heating resistor used to control laser operation. A laser package, such as a Transmitter Optical Subassembly (TOSA) includes a substrate. A laser is disposed on the substrate. A resistive heating element is disposed on the substrate with the laser. Control circuitry is connected to the resistive heating element. The control circuitry is configured to cause current flow through the resistive heating element based on temperature conditions. Current flow through the resistive heating element causes an increase in the operating temperature of the laser. This can be used to increase the effective operating temperature range of a laser.
摘要:
An example embodiment includes a TO can including a header, an RF pin opening, an internal volume, an RF pin, a submount, and a flex circuit. The header defines the RF pin opening. The internal volume is defined by a TO can housing and an interior header surface. The RF pin extends through the RF pin opening such that a first surface connection is located in the internal volume and a second surface connection is located outside of the internal volume and extends past an exterior header surface. The submount is located in the internal volume and the submount includes a submount trace. The submount trace includes a pin connection portion in-line with the RF pin and electrically coupled to the first surface connection. The flex circuit includes a flex trace further including a flex trace connection in-line with the RF pin and electrically coupled to the second surface connection.