发明授权
- 专利标题： Nonvolatile memory device and method for fabricating the same
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US11651538申请日： 2007-01-10
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公开(公告)号： US07670904B2公开(公告)日： 2010-03-02
- 发明人: Woon-Kyung Lee , Jong-Kwang Lim
- 申请人： Woon-Kyung Lee , Jong-Kwang Lim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2006-0097331 20061002
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for fabricating a nonvolatile memory device comprises providing a substrate, forming an insulating layer and a conductive layer on the substrate, forming an electrical connection path out of a portion of the conductive layer, through which the conductive layer is electrically connected to the substrate, and gate patterning the insulating layer and the conductive layer.
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