Invention Grant
- Patent Title: Nonvolatile memory device and method for fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US11651538Application Date: 2007-01-10
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Publication No.: US07670904B2Publication Date: 2010-03-02
- Inventor: Woon-Kyung Lee , Jong-Kwang Lim
- Applicant: Woon-Kyung Lee , Jong-Kwang Lim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0097331 20061002
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for fabricating a nonvolatile memory device comprises providing a substrate, forming an insulating layer and a conductive layer on the substrate, forming an electrical connection path out of a portion of the conductive layer, through which the conductive layer is electrically connected to the substrate, and gate patterning the insulating layer and the conductive layer.
Public/Granted literature
- US20080081414A1 Nonvolatile memory device and method for fabricating the same Public/Granted day:2008-04-03
Information query
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