发明授权
- 专利标题： Contact liner in integrated circuit technology
- 专利标题（中）： 接触式衬板集成电路技术
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申请号： US10791096申请日： 2004-03-01
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公开(公告)号： US07670915B1公开(公告)日： 2010-03-02
- 发明人: Errol Todd Ryan , Paul R. Besser , Simon Siu-Sing Chan , Robert J. Chiu , Mehrdad Mahanpour , Minh Van Ngo
- 申请人： Errol Todd Ryan , Paul R. Besser , Simon Siu-Sing Chan , Robert J. Chiu , Mehrdad Mahanpour , Minh Van Ngo
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A silicide is formed on the source/drain junctions and on the gate. An interlayer dielectric having contact holes therein is formed above the semiconductor substrate. Contact liners are formed in the contact holes, and contacts are then formed over the contact liners. The contact liners are nitrides of the contact material, and formed at a temperature below the thermal budget for the silicide.
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