Invention Grant
US07670917B2 Semiconductor device made by using a laser anneal to incorporate stress into a channel region
有权
通过使用激光退火制造的半导体器件将应力引入沟道区域
- Patent Title: Semiconductor device made by using a laser anneal to incorporate stress into a channel region
- Patent Title (中): 通过使用激光退火制造的半导体器件将应力引入沟道区域
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Application No.: US11853328Application Date: 2007-09-11
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Publication No.: US07670917B2Publication Date: 2010-03-02
- Inventor: Amitabh Jain , Manoj Mehrotra
- Applicant: Amitabh Jain , Manoj Mehrotra
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/31 ; H01L21/469
Abstract:
In one aspect there is provided a method of manufacturing a semiconductor device comprising forming gate electrodes over a semiconductor substrate, forming source/drains adjacent the gate electrodes, depositing a stress inducing layer over the gate electrodes. A laser anneal is conducted on at least the gate electrodes subsequent to depositing the stress inducing layer at a temperature of at least about 1100° C. for a period of time of at least about 300 microseconds, and the semiconductor device is subjected to a thermal anneal subsequent to conducting the laser anneal.
Public/Granted literature
- US20090065880A1 Semiconductor Device Made by Using a Laser Anneal to Incorporate Stress into a Channel Region Public/Granted day:2009-03-12
Information query
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