发明授权
US07674636B2 Dynamic temperature backside gas control for improved within-substrate process uniformity
有权
动态温度背面气体控制,可提高基板内工艺的均匀性
- 专利标题: Dynamic temperature backside gas control for improved within-substrate process uniformity
- 专利标题(中): 动态温度背面气体控制,可提高基板内工艺的均匀性
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申请号: US11684818申请日: 2007-03-12
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公开(公告)号: US07674636B2公开(公告)日: 2010-03-09
- 发明人: Radha Sundararajan , Lee Chen , Merritt Funk
- 申请人: Radha Sundararajan , Lee Chen , Merritt Funk
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Wood, Herron & Evans, L.L.P.
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.