发明授权
- 专利标题: Thin film transistor panel and manufacturing method thereof
- 专利标题(中): 薄膜晶体管面板及其制造方法
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申请号: US11671727申请日: 2007-02-06
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公开(公告)号: US07675065B2公开(公告)日: 2010-03-09
- 发明人: Chun-Gi You , Bong-Ju Kim
- 申请人: Chun-Gi You , Bong-Ju Kim
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2006-0011459 20060207; KR10-2006-0018853 20060227; KR10-2006-0053883 20060615
- 主分类号: H01L31/00
- IPC分类号: H01L31/00
摘要:
A thin film transistor (TFT) array panel includes a substrate, a first signal line formed on the substrate, a gate insulating layer formed on the first signal line and having a first contact hole exposing a portion of the first signal line, a first semiconductor formed on the gate insulating layer, a second signal line formed on the first semiconductor and the gate insulating layer and a drain electrode formed on the first semiconductor and separated from the second signal line. The TFT array panel further includes a conductor formed on the gate insulating layer and connected to the first signal line through the first contact hole, a passivation layer formed on the second signal line, the drain electrode, and the conductor, and having a second contact hole exposing the drain electrode and a pixel electrode formed on the passivation layer and connected to the drain electrode through the second contact hole.
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