Invention Grant
- Patent Title: Light emitting transistor
- Patent Title (中): 发光晶体管
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Application No.: US11878680Application Date: 2007-07-26
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Publication No.: US07675071B2Publication Date: 2010-03-09
- Inventor: Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
- Applicant: Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2006-0113886 20061117
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00
Abstract:
Provided is a light emitting transistor comprising a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on the collector layer; and a first conductivity-type emitter layer formed on the base layer. At least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods.
Public/Granted literature
- US20080116465A1 Light emitting transistor Public/Granted day:2008-05-22
Information query
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