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公开(公告)号：US20120194453A1
公开(公告)日：2012-08-02
申请号：US13338927
申请日：2011-12-28
Applicant: Woon Chun KIM , Won Ha MOON , Yong Soo OH , Jong Young LEE
Inventor： Woon Chun KIM , Won Ha MOON , Yong Soo OH , Jong Young LEE
IPC: G06F3/041
CPC classification number: G06F3/0416 , G06F2203/04103
Abstract: Disclosed herein is a touch panel. A touch panel according to a first preferred embodiment of the present invention includes: a base member; a transparent electrode formed in an active area of the base member; an insulator formed in a bezel area of the base member, and convexly protruded from the base member; and an electrode wiring formed on an exposed surface of the insulator. In addition, a touch panel according to a second preferred embodiment of the present invention includes: a base member having a groove portion formed such that an exposed surface thereof has a concave curved surface; a transparent electrode formed in an active area; and an electrode wire connected to one end or both ends of the transparent electrode and formed on the exposed surface of the groove portion.
Abstract translation: 这里公开了触摸面板。 根据本发明的第一优选实施例的触摸面板包括：基座构件; 形成在所述基底构件的有源区域中的透明电极; 绝缘体，其形成在所述基底构件的边框区域中，并且从所述基底构件凸出地突出; 以及形成在绝缘体的暴露表面上的电极布线。 此外，根据本发明第二优选实施例的触摸面板包括：基部构件，其具有形成为使得其暴露表面具有凹曲面的凹槽部分; 形成在有源区的透明电极; 以及连接到透明电极的一端或两端并形成在凹槽部分的暴露表面上的电极线。
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公开(公告)号：US20120056845A1
公开(公告)日：2012-03-08
申请号：US13014945
申请日：2011-01-27
Applicant: Woon Chun Kim , Yong Soo Oh , Won Ha Moon , Jong Young Lee
Inventor： Woon Chun Kim , Yong Soo Oh , Won Ha Moon , Jong Young Lee
Abstract: Disclosed herein is a touch screen including a touch panel and a window disposed at a top side of the touch panel. In particular, a groove part is formed in the window or the lower substrate and the touch panel is configured in the groove part to reduce an interface of the touch panel, exposed to the outside, thereby making it possible to prevent infiltration of moisture and oil.
Abstract translation: 这里公开了一种触摸屏，其包括触摸面板和设置在触摸面板的顶侧的窗口。 特别地，在窗口或下基板中形成有槽部，并且将触摸面板配置在槽部，以减少触摸面板的暴露于外部的界面，从而可以防止水分和油的渗透 。
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3.发明授权公开(公告)号：US07781778B2
公开(公告)日：2010-08-24
申请号：US11896667
申请日：2007-09-05
Applicant: Won Ha Moon , Chang Hwan Choi , Young Nam Hwang , Hyun Jun Kim
Inventor： Won Ha Moon , Chang Hwan Choi , Young Nam Hwang , Hyun Jun Kim
IPC: H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/14 , H01L31/00
CPC classification number: H01L33/508 , H01L33/42 , Y10S977/70 , Y10S977/701 , Y10S977/72 , Y10S977/721 , Y10S977/762 , Y10S977/765 , Y10S977/932 , Y10S977/939
Abstract: There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.
Abstract translation: 提供了使用形成在纳米线结构上的荧光膜的半导体发光器件及其制造方法，该器件包括：衬底; 包括依次形成在所述基板上的第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 形成在发光结构上并由透明材料形成的多个纳米线结构; 以及形成在所述多个纳米线结构中的每一个的至少上表面和侧表面上的荧光膜。
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公开(公告)号：US20090145477A1
公开(公告)日：2009-06-11
申请号：US12193831
申请日：2008-08-19
Applicant: Won Ha Moon , Chang Hwan Choi
Inventor： Won Ha Moon , Chang Hwan Choi
IPC: H01L31/00
CPC classification number: H01L31/035281 , H01L31/03529 , H01L31/062 , Y02E10/50
Abstract: There is provided a solar cell including: a substrate; and an energy absorption structure formed on the substrate, the energy absorption structure including a metal layer, a semiconductor layer and an insulator formed therebetween, wherein at least one of the metal layer, the semiconductor layer and the insulator is formed of a plurality of nanowire structures. The solar cell has the energy absorption structure formed of a nanowire MIS junction structure to ensure high photoelectric conversion efficiency. Further, the solar cell does not require an epitaxial growth, thereby free from drawbacks of an epitaxial layer such as crystal defects.
Abstract translation: 提供一种太阳能电池，包括：基板; 以及形成在所述基板上的能量吸收结构，所述能量吸收结构包括金属层，半导体层和在其间形成的绝缘体，其中所述金属层，所述半导体层和所述绝缘体中的至少一个由多个纳米线 结构。 太阳能电池具有由纳米线MIS结构结构形成的能量吸收结构，以确保高的光电转换效率。 此外，太阳能电池不需要外延生长，从而没有诸如晶体缺陷的外延层的缺点。
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公开(公告)号：US20090133750A1
公开(公告)日：2009-05-28
申请号：US12201155
申请日：2008-08-29
Applicant: Won Ha MOON , Chang Hwan Choi , Ji Chul An , Chang Hwan Park
Inventor： Won Ha MOON , Chang Hwan Choi , Ji Chul An , Chang Hwan Park
IPC: H01L31/00
CPC classification number: H01L31/035281 , H01L31/022466 , H01L31/06 , Y02E10/50
Abstract: There is provided a solar cell including: a substrate; an energy absorption layer formed on the substrate and having a plurality of nanowire structures, each of the nanowire structures including an n-type semiconductor and a p-type semiconductor joined together; and n-type and p-type electrodes electrically connected to the n-type and p-type semiconductors, respectively. The solar cell exhibits high photoelectric efficiency due to pn junction of the nanowire structures. Further, the solar cell can absorb light falling within a substantially whole range of solar spectrum and does not require an epitaxial growth process, thereby overcoming drawbacks of an epitaxial layer such as crystal defect.
Abstract translation: 提供一种太阳能电池，包括：基板; 形成在所述基板上并且具有多个纳米线结构的能量吸收层，所述纳米线结构中的每一个包括连接在一起的n型半导体和p型半导体; 以及分别与n型和p型半导体电连接的n型和p型电极。 由于纳米线结构的pn结，太阳能电池表现出高的光电效率。 此外，太阳能电池可以吸收落在基本上整个太阳光谱范围内的光，并且不需要外延生长工艺，从而克服诸如晶体缺陷的外延层的缺陷。
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Patent Agency Ranking
公开(公告)号：US08809901B2
公开(公告)日：2014-08-19
申请号：US12750195
申请日：2010-03-30
Applicant: Won Ha Moon , Dong Woohn Kim , Jong Pa Hong
Inventor： Won Ha Moon , Dong Woohn Kim , Jong Pa Hong
IPC: H01L33/32
CPC classification number: H05B33/145 , B82Y20/00 , B82Y30/00 , H01L33/18 , Y10S977/764 , Y10S977/816 , Y10S977/90 , Y10S977/95
Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.
Abstract translation: 本发明提供一种纳米线发光器件及其制造方法。 在发光器件中，形成第一和第二导电型覆盖层，并且其间插入有源层。 第一和第二导电型覆盖层和有源层中的至少一个是通过制备由半导体纳米线和有机粘合剂构成的混合物层并从其中除去有机粘合剂而获得的半导体纳米线层。
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公开(公告)号：US20100284125A1
公开(公告)日：2010-11-11
申请号：US11976073
申请日：2007-10-19
Applicant: Won Ha MOON , Chang Hwan CHOI , Chul Tack LIM , Young Nam HWANG
Inventor： Won Ha MOON , Chang Hwan CHOI , Chul Tack LIM , Young Nam HWANG
CPC classification number: H01G4/01 , B82Y10/00 , H01G4/008 , H01G4/085 , H01G4/12 , H01G4/33 , H01L28/90
Abstract: Provided is a method of manufacturing a nanowire capacitor including forming a lower metal layer on a substrate; growing conductive nanowires on the lower metal layer, the conductive nanowires including metal and transparent electrodes; depositing a dielectric layer on the lower metal layer including the grown conductive nanowires; growing dielectric nanowires on the deposited dielectric layer; and depositing an upper metal layer on the dielectric layer including the grown dielectric nanowires.
Abstract translation: 提供一种纳米线电容器的制造方法，其包括在基板上形成下层金属层; 在下金属层上生长导电纳米线，导电纳米线包括金属和透明电极; 在包括生长的导电纳米线的下金属层上沉积介电层; 在沉积的介电层上生长介电纳米线; 以及在包括所述生长的电介质纳米线的介电层上沉积上金属层。
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公开(公告)号：US20080142782A1
公开(公告)日：2008-06-19
申请号：US12000360
申请日：2007-12-12
Applicant: Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
Inventor： Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
IPC: H01L33/00
CPC classification number: H01L33/0037 , H01L33/08 , H01L33/22 , H01L2933/0083 , Y10S977/762
Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.
Abstract translation: 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。
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公开(公告)号：US08030664B2
公开(公告)日：2011-10-04
申请号：US12000360
申请日：2007-12-12
Applicant: Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
Inventor： Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
IPC: H01L33/06
CPC classification number: H01L33/0037 , H01L33/08 , H01L33/22 , H01L2933/0083 , Y10S977/762
Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.
Abstract translation: 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。
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公开(公告)号：US07675071B2
公开(公告)日：2010-03-09
申请号：US11878680
申请日：2007-07-26
Applicant: Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
Inventor： Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
CPC classification number: H01L33/0004 , B82Y20/00 , H01L33/08 , H01L33/18 , H01L33/20
Abstract: Provided is a light emitting transistor comprising a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on the collector layer; and a first conductivity-type emitter layer formed on the base layer. At least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods.
Abstract translation: 提供一种发光晶体管，其包括形成在基板上的第一导电型集电极层; 形成在集电体层上的第二导电型基层; 以及形成在基底层上的第一导电型发射极层。 集电极层，基极层和发射极层中的至少一个具有多个纳米棒的纳米棒结构。
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