Invention Grant
- Patent Title: Integrated circuit memory system employing silicon rich layers
- Patent Title (中): 集成电路存储系统采用富硅层
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Application No.: US11461131Application Date: 2006-07-31
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Publication No.: US07675104B2Publication Date: 2010-03-09
- Inventor: Amol Ramesh Joshi , Harpreet Sachar , YouSeok Suh , Shenqing Fang , Chih-Yuh Yang , Lovejeet Singh , David H. Matsumoto , Hidehiko Shiraiwa , Kuo-Tung Chang , Scott A. Bell , Allison Holbrook , Satoshi Torii
- Applicant: Amol Ramesh Joshi , Harpreet Sachar , YouSeok Suh , Shenqing Fang , Chih-Yuh Yang , Lovejeet Singh , David H. Matsumoto , Hidehiko Shiraiwa , Kuo-Tung Chang , Scott A. Bell , Allison Holbrook , Satoshi Torii
- Applicant Address: US CA Sunnyvale US CA Sunnyvale
- Assignee: Spansion LLC,Advanced Micro Devices, Inc.
- Current Assignee: Spansion LLC,Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale US CA Sunnyvale
- Agency: Farjami & Farjami LLP
- Main IPC: H01L21/8247
- IPC: H01L21/8247
Abstract:
An integrated circuit memory system that includes: providing a substrate; forming a silicon rich charge storage layer over the substrate; forming a first isolation trench through the silicon rich charge storage layer in a first direction; and forming a second isolation trench through the silicon rich charge storage layer in a second direction.
Public/Granted literature
- US20080023751A1 INTEGRATED CIRCUIT MEMORY SYSTEM EMPLOYING SILICON RICH LAYERS Public/Granted day:2008-01-31
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