A non-volatile semiconductor memory device, including a memory array having a plurality of first bit line groups and a plurality of second bit line groups that are alternately arranged to be adjacent each other, a plurality of data lines, a plurality of first page buffers, a plurality of second page buffers, and a plurality of switches. Each of the first page buffers is electrically connected to a corresponding one of the first bit line groups and arranged on a first side of the memory array. The first page buffers transmit data to the data lines. Each of the second page buffers is electrically connected to a corresponding one of the second bit line groups and arranged on a second side of the memory array. Each of the switches enables data transmission between a corresponding one of the first page buffers and a corresponding one of the second page buffers.