利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US07675779B2 Non-volatile memory devices and methods of operating the same 有权
非易失性存储器件及其操作方法

Non-volatile memory devices and methods of operating the same
摘要：
A non-volatile memory device includes memory transistors disposed on a semiconductor substrate in a NAND string. A string select transistor is disposed at a first end of the NAND string, and a ground select transistor is disposed at a second end of the NAN string. Bit lines are electrically connected to the semiconductor substrate outside of the string select transistor and a gate electrode of the ground select transistor.
摘要（中）：

非易失性存储器件包括设置在NAND串中的半导体衬底上的存储晶体管。 串选择晶体管设置在NAND串的第一端，并且接地选择晶体管设置在NAN串的第二端。 位线电连接到串选择晶体管外部的半导体衬底和接地选择晶体管的栅电极。

公开/授权文献
信息查询
Espacenet
0/0