发明授权
US07675789B2 Programmable heavy-ion sensing device for accelerated DRAM soft error detection
有权
用于加速DRAM软错误检测的可编程重离子感测装置
- 专利标题： Programmable heavy-ion sensing device for accelerated DRAM soft error detection
- 专利标题（中）： 用于加速DRAM软错误检测的可编程重离子感测装置
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申请号： US12134347申请日： 2008-06-06
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公开(公告)号： US07675789B2公开(公告)日： 2010-03-09
- 发明人: Howard H. Chen , John A. Fifield , Louis L. Hsu , Henry H. K. Tang
- 申请人： Howard H. Chen , John A. Fifield , Louis L. Hsu , Henry H. K. Tang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Brian P. Verminski
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
Aspects of the invention relate to a programmable heavy-ion sensing device for accelerated DRAM soft error detection. Design of a DRAM-based alpha particle sensing apparatus is preferred to be used as an accelerated on-chip SER test vehicle. The sensing apparatus is provided with programmable sensing margin, refresh rate, and supply voltage to achieve various degree of SER sensitivity. In addition, a dual-mode DRAM array is proposed so that at least a portion of the array can be used to monitor high-energy particle activities during soft-error detection (SED) mode.
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