Invention Grant
- Patent Title: Buried bitline with reduced resistance
- Patent Title (中): 埋伏的位线减少阻力
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Application No.: US11478313Application Date: 2006-06-30
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Publication No.: US07678654B2Publication Date: 2010-03-16
- Inventor: Christoph Kleint , Clemens Fitz , Ulrike Bewersdorff-Sarlette , Christoph Ludwig , David Pritchard , Torsten Müller , Hocine Boubekeur
- Applicant: Christoph Kleint , Clemens Fitz , Ulrike Bewersdorff-Sarlette , Christoph Ludwig , David Pritchard , Torsten Müller , Hocine Boubekeur
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Edell, Shapiro & Finnan LLC
- Main IPC: H01L21/8247
- IPC: H01L21/8247 ; H01L29/792

Abstract:
A memory cell array includes a number of memory cells, each of the memory cells including a source and a drain region defined by corresponding bitlines within a semiconductor substrate. Each of the bitlines has a doped semiconductor region as well as a conductive region in direct electrical contact with the doped semiconductor region.
Public/Granted literature
- US20080002466A1 Buried bitline with reduced resistance Public/Granted day:2008-01-03
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