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US07678654B2 Buried bitline with reduced resistance 失效
埋伏的位线减少阻力

Buried bitline with reduced resistance
Abstract:
A memory cell array includes a number of memory cells, each of the memory cells including a source and a drain region defined by corresponding bitlines within a semiconductor substrate. Each of the bitlines has a doped semiconductor region as well as a conductive region in direct electrical contact with the doped semiconductor region.
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