发明授权
- 专利标题： Method of reducing current leakage in a metal insulator metal semiconductor capacitor and semiconductor capacitor thereof
- 专利标题（中）： 减少金属绝缘体金属半导体电容器及其半导体电容器中漏电的方法
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申请号： US11421771申请日： 2006-06-02
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公开(公告)号： US07678659B2公开(公告)日： 2010-03-16
- 发明人: Chao-Chun Tu , Ming-Chieh Lin
- 申请人： Chao-Chun Tu , Ming-Chieh Lin
- 申请人地址： TW Hsin-Chu Hsien
- 专利权人： MediaTek Inc.
- 当前专利权人： MediaTek Inc.
- 当前专利权人地址： TW Hsin-Chu Hsien
- 代理商 Winston Hsu
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for reducing leakage current in a semiconductor capacitor. The method includes providing a top plate for collecting charge, providing a bottom plate for collecting an opposing charge to the top plate, providing a dielectric layer for insulation between the top plate and the bottom plate, providing a top contact, providing a bottom contact, providing a plurality of vias including top level vias for connecting the top plate to the top contact, and bottom level vias for connecting the bottom plate to the bottom contact; and separating a via and an adjacent structure such that their distance is greater than a minimum via spacing requirement of a foundry design rule for a semiconductor process producing the semiconductor capacitor.
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