发明授权
US07678699B2 Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction
有权
通过使用硅烷反应形成用于铜金属化层的绝缘覆盖层的方法
- 专利标题： Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction
- 专利标题（中）： 通过使用硅烷反应形成用于铜金属化层的绝缘覆盖层的方法
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申请号： US11531084申请日： 2006-09-12
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公开(公告)号： US07678699B2公开(公告)日： 2010-03-16
- 发明人: Joerg Hohage , Matthias Lehr , Volker Kahlert
- 申请人： Joerg Hohage , Matthias Lehr , Volker Kahlert
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102005057057 20051130
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A new technique is disclosed in which a barrier/capping layer for a copper-based metal line is formed by using a thermal-chemical treatment with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma-based deposition of silicon nitride and/or silicon carbon nitride. The thermal-chemical treatment is performed on the basis of an ammonium/nitrogen mixture in the absence of any plasma ambient.
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