Invention Grant
US07678751B2 Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same
有权
用于除去光致抗蚀剂的组合物，去除光致抗蚀剂的方法及使用其制造半导体器件的方法
- Patent Title: Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same
- Patent Title (中): 用于除去光致抗蚀剂的组合物，去除光致抗蚀剂的方法及使用其制造半导体器件的方法
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Application No.: US11296000Application Date: 2005-12-06
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Publication No.: US07678751B2Publication Date: 2010-03-16
- Inventor: Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
- Applicant: Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2004-0101679 20041206
- Main IPC: C11D7/50
- IPC: C11D7/50
Abstract:
Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.
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