发明授权
US07679085B2 Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method
有权
显示装置,薄膜晶体管的制造方法以及使用该方法制造薄膜晶体管阵列基板的方法
- 专利标题: Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method
- 专利标题(中): 显示装置,薄膜晶体管的制造方法以及使用该方法制造薄膜晶体管阵列基板的方法
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申请号: US11646241申请日: 2006-12-28
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公开(公告)号: US07679085B2公开(公告)日: 2010-03-16
- 发明人: Woong Gi Jun , Gee Sung Chae , Jae Seok Heo
- 申请人: Woong Gi Jun , Gee Sung Chae , Jae Seok Heo
- 申请人地址: KR Seoul
- 专利权人: LG Display Co., Ltd.
- 当前专利权人: LG Display Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: McKenna Long & Aldridge LLP
- 优先权: KR10-2006-0061432 20060630
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L35/24
摘要:
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.