Invention Grant
- Patent Title: Image sensor and fabrication method thereof
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US11465815Application Date: 2006-08-21
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Publication No.: US07679157B2Publication Date: 2010-03-16
- Inventor: Takashi Miida
- Applicant: Takashi Miida
- Applicant Address: TW Hsin-Chu
- Assignee: Powerchip Semiconductor Corp.
- Current Assignee: Powerchip Semiconductor Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L29/205
Abstract:
An image sensor has a substrate, a dielectric layer positioned on the substrate, a pixel array including a plurality of pixels defined on the substrate, a shield electrode positioned between any two adjacent pixel electrodes of the pixels, a photo conductive layer positioned on the shield electrode and the pixel electrodes, and a transparent conductive layer covering the photo conductive layer.
Public/Granted literature
- US20080042230A1 IMAGE SENSOR AND FABRICATION METHOD THEREOF Public/Granted day:2008-02-21
Information query
IPC分类:
