公开(公告)号：US07679157B2

公开(公告)日：2010-03-16

申请号：US11465815

申请日：2006-08-21

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L29/205

CPC分类号： H01L31/105 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632

摘要： An image sensor has a substrate, a dielectric layer positioned on the substrate, a pixel array including a plurality of pixels defined on the substrate, a shield electrode positioned between any two adjacent pixel electrodes of the pixels, a photo conductive layer positioned on the shield electrode and the pixel electrodes, and a transparent conductive layer covering the photo conductive layer.

摘要翻译： 图像传感器具有衬底，位于衬底上的电介质层，包括限定在衬底上的多个像素的像素阵列，位于像素的任意两个相邻像素电极之间的屏蔽电极，位于屏蔽层上的光电导层 电极和像素电极，以及覆盖光电导层的透明导电层。

公开(公告)号：US06944062B2

公开(公告)日：2005-09-13

申请号：US10831333

申请日：2004-04-26

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： G11C16/02 ,  G11C16/04 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11543 ,  G11C16/0458 ,  G11C16/0491 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11526 ,  H01L29/66825 ,  H01L29/7887

摘要： A transistor includes p-type semiconductor (12) including a projection (13a) having a pair of side walls (13b, 13b) facing each other, a gate insulation layer (15c), a pair of n-type source/drain regions (BL1, BL2), tunnel insulation layers (15a), a pair of floating gates (FG1, FG2), inter-polycrystalline insulation layers, and a control gate (CG). The root portion of the projection (13A), which virtually connects the source/drain regions (BL1, BL2) with a straight line, is higher in the concentration of the p-type impurity than the other portion. A delete voltage for deleting charges stored in the floating gate (FG) is applied between the control gate (CG) and the source/drain region (BL1, BL2), so that a delete current flows toward the control gate (CG) or the source/drain region (BL1, BL2), the charges stored being deleted.

摘要翻译： 晶体管包括：p型半导体（12），其包括具有彼此面对的一对侧壁（13b，13b）的突起（13a），栅极绝缘层（15c），一对n型源极 漏极区域（BL 1，BL 2），隧道绝缘层（15a），一对浮动栅极（FG 1，FG 2），多晶硅间绝缘层和控制栅极（CG）。 实际上将源极/漏极区域（BL 1，BL 2）与直线连接的突起（13A）的根部比p型杂质的浓度高于其他部分。 用于删除存储在浮动栅极（FG）中的电荷的删除电压施加在控制栅极（CG）和源极/漏极区域（BL 1，BL 2）之间，使得删除电流流向控制栅极（CG） 或源/漏区（BL 1，BL 2），存储的电荷被删除。

公开(公告)号：US5777675A

公开(公告)日：1998-07-07

申请号：US988334

申请日：1992-12-09

申请人： Takashi Miida ,  Kazuhiro Kawajiri ,  Jun Hasegawa ,  Isao Taniguchi

发明人： Takashi Miida ,  Kazuhiro Kawajiri ,  Jun Hasegawa ,  Isao Taniguchi

IPC分类号： G02B7/34 ,  G01J1/10 ,  G01J1/16 ,  G01J1/44 ,  G03B7/28 ,  G03B13/36 ,  H04N5/235 ,  H04N5/232 ,  H04N5/335

CPC分类号： G01J1/44 ,  G01J1/10 ,  G01J1/1626 ,  H04N5/2351

摘要： An automatic light measuring device for an image pickup device includes a pair of line sensors suitable for an automatic focusing adjustment and disposed on a semiconductor chip at positions spaced apart by a predetermined distances, an integration time controller for generating an integration control signal for controlling the charge accumulation by incident light by detecting the amount of charges accumulated in the line sensors, a first exposure amount detector for calculating the intensity of incident light from the integration control signal, a second exposure amount detector inclusive of photoelectric conversion elements formed on the semiconductor chip, for detecting the amount of incident light, a pair of lenses mounted above the pair of line sensors for focusing the image of substantially the same subject within the central area of the field of view, and an optical system for applying light within the area broader than the central area of the field of view to the surface of the semiconductor chip inclusive of the photoelectric conversion elements. The photoelectric conversion elements are disposed between the pair of line sensors. The optical system may be made of an acrylic rod, light focusing fibers, retrofocus lens, or the like.

摘要翻译： 一种用于图像拾取装置的自动光测量装置包括一对适合于自动聚焦调节的线传感器，并且在间隔开预定距离的位置处设置在半导体芯片上，积分时间控制器用于产生用于控制 通过检测在线传感器中累积的电荷量的入射光的电荷积累，用于从积分控制信号计算入射光强度的第一曝光量检测器，包括形成在半导体芯片上的光电转换元件的第二曝光量检测器 ，用于检测入射光量，安装在一对线传感器上方的一对透镜，用于将基本相同的被摄体的图像聚焦在视场的中心区域内，以及用于在该区域内施加光的光学系统 比中央地区的视野到了表面 包括光电转换元件的半导体芯片。 光电转换元件设置在一对线传感器之间。 光学系统可以由丙烯酸棒，聚光纤维，后焦距透镜等制成。

公开(公告)号：US5359383A

公开(公告)日：1994-10-25

申请号：US706539

申请日：1991-05-28

申请人： Takashi Miida ,  Hiroshi Iwabuchi ,  Yoshimitsu Kudoh ,  Hideki Mutoh

发明人： Takashi Miida ,  Hiroshi Iwabuchi ,  Yoshimitsu Kudoh ,  Hideki Mutoh

IPC分类号： G03B13/36 ,  G02B7/34 ,  H03H19/00

CPC分类号： G02B7/34

摘要： A phase difference detection unit for an automatic focusing system of a camera or the like. The phase difference detecting unit includes a pair of linear image pickup devices which receive a pair of optical images of an object formed by the lens in the automatic focusing system of a camera or the like. The detecting unit also has a correlation operating circuit which determines whether or not the lens of the focusing system is in a proper focus condition. The proper focus condition is determined by a minimum correlation value output by the correlation operating circuit, the value being indicative of the correlation between a pair of phase shifted analog electrical signals representative of the optical images received by the pickup devices. The correlation operating circuit is capable of operation at high speed with improved accuracy by maintaining the capacitive loads of the input terminals of the correlation operating circuit.

摘要翻译： 用于相机等的自动对焦系统的相位差检测单元。 相位差检测单元包括一对在相机等的自动对焦系统中接收由透镜形成的物体的一对光学图像的线性图像拾取装置。 检测单元还具有确定聚焦系统的透镜是否处于适当对焦状态的相关运算电路。 适当的聚焦条件由相关运算电路输出的最小相关值确定，该值表示代表由拾取装置接收的光学图像的一对相移模拟电信号之间的相关性。 相关运算电路能够通过维持相关运算电路的输入端子的容性负载而以高速度提高精度。

公开(公告)号：US4926205A

公开(公告)日：1990-05-15

申请号：US321379

申请日：1989-03-10

申请人： Takashi Miida ,  Jin Murayama

发明人： Takashi Miida ,  Jin Murayama

IPC分类号： G02B7/34 ,  H04N5/232 ,  H04N5/335 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378

CPC分类号： G02B7/346

摘要： A phase-difference detector for use with an auto-focus detecting apparatus of camera. The detector comprises a means for creating correlative values which exhibit outstanding characteristics that makes it possible to ascertain the maximum and minimum values. The detector is capable of detecting a phase-difference with high accuracy.

摘要翻译： 一种与相机的自动对焦检测装置一起使用的相位差检测器。 检测器包括用于产生相关值的装置，其显示突出的特性，使得可以确定最大值和最小值。 检测器能够以高精度检测相位差。

公开(公告)号：US4833636A

公开(公告)日：1989-05-23

申请号：US207972

申请日：1988-06-17

申请人： Takashi Miida ,  Nozomu Ozaki

发明人： Takashi Miida ,  Nozomu Ozaki

IPC分类号： G02B7/34 ,  G06G7/19

CPC分类号： G06G7/1907

摘要： A correlator, such as may be used in a phase detecting device of an automatic focusing circuit for a camera , has a simple arrangement that attains improved accuracy and high speed. A pair of charge storing elements is provided to which input signals are applied. When predetermined charges are supplied into potential wells formed in the charge storing elements, charge remaining in the potential wells depending on their depth can be detected as the absolute value of the difference between the two input signals. Therefore, the input signals can be subjected to correlation directly as they are, that is, in analog form, without conversion to digital form.

摘要翻译： 诸如可以用于相机的自动对焦电路的相位检测装置中的相关器具有实现提高的精度和高速度的简单布置。 提供一对电荷存储元件，施加输入信号。 当将预定的电荷提供到形成在电荷存储元件中的势阱中时，可以检测潜在阱中依赖于其深度的剩余电荷作为两个输入信号之间的差的绝对值。 因此，可以直接对输入信号进行直接相关，即以模拟形式，而不转换为数字形式。

公开(公告)号：US08334164B2

公开(公告)日：2012-12-18

申请号：US12691704

申请日：2010-01-21

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： H01L21/00

CPC分类号： H01L31/105 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632

摘要： An image sensor has a substrate, a dielectric layer positioned on the substrate, a pixel array including a plurality of pixels defined on the substrate, a shield electrode positioned between any two adjacent pixel electrodes of the pixels, a photo conductive layer positioned on the shield electrode and the pixel electrodes, and a transparent conductive layer covering the photo conductive layer.

摘要翻译： 图像传感器具有衬底，位于衬底上的电介质层，包括限定在衬底上的多个像素的像素阵列，位于像素的任意两个相邻像素电极之间的屏蔽电极，位于屏蔽层上的光电导层 电极和像素电极，以及覆盖光电导层的透明导电层。

公开(公告)号：US06984863B2

公开(公告)日：2006-01-10

申请号：US10397377

申请日：2003-03-27

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： H01L29/76

CPC分类号： H01L27/11521 ,  H01L27/105 ,  H01L27/11524 ,  H01L27/11553 ,  H01L29/7887

摘要： A cell transistor includes source/drain regions formed at a lower level than part of its channel region. A select transistor has a channel region and source/drain regions formed at substantially the same level as the source/drain regions of the cell transistor. One of the source/drain regions of the cell transistor and one of the source/drain regions of the select transistor are electrically interconnected to each other in substantially the same plane.

摘要翻译： 单元晶体管包括形成在比其沟道区的一部分更低的电平的源/漏区。 选择晶体管具有形成在与单元晶体管的源极/漏极区域基本相同的电平的沟道区域和源极/漏极区域。 单元晶体管的源极/漏极区域之一和选择晶体管的源极/漏极区域中的一个在基本上相同的平面中彼此电互连。

公开(公告)号：US06656777B2

公开(公告)日：2003-12-02

申请号：US10176174

申请日：2002-06-21

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： H01L2184

CPC分类号： H01L31/103 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14692

摘要： A first buried layer of one conductivity and a first well region of opposite conductivity are formed in a semiconductor layer using a first mask. A second mask is used to form a second buried layer and a second well region of the opposite conductivity and to introduce impurity of the one conductivity type into a surface of the second well to form a channel doped layer of the one conductivity. A high concentration buried layer of the opposite conductivity is formed by introducing opposite conductivity impurity into the second well region using a third mask. A gate insulating film is formed on the semiconductor layer by thermal oxidation. A source region and a drain region of the one conductivity type are formed on the surface of the second well region, on both sides of a gate electrode.

摘要翻译： 使用第一掩模在半导体层中形成一个导电性的第一掩埋层和相反导电性的第一阱区。 第二掩模用于形成具有相反导电性的第二掩埋层和第二阱区，并将一种导电类型的杂质引入第二阱的表面以形成一种导电性的沟道掺杂层。 通过使用第三掩模将相反的导电性杂质引入第二阱区域来形成相反电导率的高浓度掩埋层。 通过热氧化在半导体层上形成栅极绝缘膜。 在栅电极的两侧，在第二阱区的表面上形成一个导电类型的源区和漏区。

公开(公告)号：US06504194B1

公开(公告)日：2003-01-07

申请号：US09715065

申请日：2000-11-20

申请人： Takashi Miida

发明人： Takashi Miida

IPC分类号： H01L27146

CPC分类号： H01L31/103 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14692

摘要： There is provided a solid state imaging device using a MOS image sensor of a threshold voltage modulation system employed in a video camera, an electronic camera, an image input camera, a scanner, a facsimile, or the like. In configuration, in the solid state imaging device that comprises a photo diode formed in a second semiconductor layer 15a of opposite conductivity type in a first semiconductor layer 12 and 32 of one conductivity type, and a light signal detecting insulated gate field effect transistor formed in a fourth semiconductor layer 15b of opposite conductivity type in a third semiconductor layer 12 of one conductivity type adjacently to the photo diode, a carrier pocket 25 is provided in the fourth semiconductor layer 15b, and a portion of the first semiconductor layer 12, 32 under the second semiconductor layer 15a is thicker than a portion of the third semiconductor layer 12 under the fourth semiconductor layer 15b in a depth direction.