Invention Grant
- Patent Title: Self-mode locked multi-section semiconductor laser diode
- Patent Title (中): 自锁式多段半导体激光二极管
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Application No.: US10726141Application Date: 2003-12-01
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Publication No.: US07680169B2Publication Date: 2010-03-16
- Inventor: Kyung-Hyun Park , Dae-Su Yee , Dong-Churl Kim , Young-Ahn Leem , Sung-Bock Kim
- Applicant: Kyung-Hyun Park , Dae-Su Yee , Dong-Churl Kim , Young-Ahn Leem , Sung-Bock Kim
- Applicant Address: KR
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2002-0080707 20021217
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A multi-section semiconductor laser diode is disclosed. The laser diode includes a complex-coupled DFB laser section that includes a complex-coupled grating and an active structure for controlling the intensity of oscillating laser light, to oscillate laser light in a single mode, and an external cavity including a phase control section and an amplifier section, the phase control section having a passive waveguide that controls a phase variation of feedback laser light, the amplification section having an active structure that controls the strength of the feedback laser light. Currents are separately provided to the three sections to generate optical pulses with tuning range of tens of GHz. Applications include the clock recovery in the 3R regeneration of the optical communication.
Public/Granted literature
- US20040125851A1 Self-mode locked multi-section semiconductor laser diode Public/Granted day:2004-07-01
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