发明授权
- 专利标题： Method of processing substrate, and method of and program for manufacturing electronic device
- 专利标题（中）： 基板的处理方法，电子器件的制造方法及程序
-
申请号： US11353132申请日： 2006-02-14
-
公开(公告)号： US07682517B2公开(公告)日： 2010-03-23
- 发明人: Eiichi Nishimura , Kenya Iwasaki
- 申请人： Eiichi Nishimura , Kenya Iwasaki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-036716 20050214; JP2005-278843 20050926
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
公开/授权文献
信息查询
