发明授权
- 专利标题: Plasma processing apparatus and control method thereof
- 专利标题(中): 等离子体处理装置及其控制方法
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申请号: US11060547申请日: 2005-02-18
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公开(公告)号: US07682982B2公开(公告)日: 2010-03-23
- 发明人: Naoto Sagae , Hiroshi Tsuchiya , Tsutomu Higashiura , Hideo Kato , Ryuji Ohtani
- 申请人: Naoto Sagae , Hiroshi Tsuchiya , Tsutomu Higashiura , Hideo Kato , Ryuji Ohtani
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2004-045172 20040220
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-frequency powers respectively to the upper and the lower electrode; and an output controller for raising each of outputs from the high-frequency power supplies at least three times in a stepwise manner up to each of set levels for processing the object to be processed. The output controller adjusts each of rising times of the outputs from the high-frequency power supplies so that an output of the second high-frequency power supply is raised earlier than an output of the first high-frequency power supply while the outputs from the high-frequency power supplies are raised up to the set levels in a stepwise manner.
公开/授权文献
- US20050205208A1 Plasma processing apparatus and control method thereof 公开/授权日:2005-09-22
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