发明授权
- 专利标题： Stacked memory and method for forming the same
- 专利标题（中）： 堆积记忆及其形成方法
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申请号： US11709234申请日： 2007-02-22
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公开(公告)号： US07683404B2公开(公告)日： 2010-03-23
- 发明人: Young-Chul Jang , Won-Seok Cho , Jae-Hoon Jang , Soon-Moon Jung , Hoo-Sung Cho , Jong-Hyuk Kim
- 申请人： Young-Chul Jang , Won-Seok Cho , Jae-Hoon Jang , Soon-Moon Jung , Hoo-Sung Cho , Jong-Hyuk Kim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2006-0089314 20060914
- 主分类号： H01L25/065
- IPC分类号： H01L25/065
摘要：
A stacked memory includes at least two semiconductor layers each including a memory cell array. A transistor is formed in a peripheral circuit region of an uppermost semiconductor layer of the at least two semiconductor layers. The transistor is used to operate the memory cell array.
公开/授权文献
- US20080067573A1 Stacked memory and method for forming the same 公开/授权日：2008-03-20