发明授权
US07684277B2 Non-volatile memory device with controlled application of supply voltage
有权
具有受控应用电源电压的非易失性存储器件
- 专利标题: Non-volatile memory device with controlled application of supply voltage
- 专利标题(中): 具有受控应用电源电压的非易失性存储器件
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申请号: US11613949申请日: 2006-12-20
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公开(公告)号: US07684277B2公开(公告)日: 2010-03-23
- 发明人: Gunther Lehmann , Michael Diel , Mario Di Ronza
- 申请人: Gunther Lehmann , Michael Diel , Mario Di Ronza
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Patterson & Sheridan, L.L.P.
- 优先权: DE102005061719 20051222
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
Embodiments of the invention provide a memory device comprising a non-volatile memory element, a read-out circuit for reading out an item of memory information stored in the memory element, a switching unit, by means of which a supply voltage can be applied to the read-out circuit, and a control unit, which has the capability of controlling the switching unit in a manner dependent on the memory information stored in the memory element.
公开/授权文献
- US20070165466A1 MEMORY DEVICE COMPRISING FUSE MEMORY ELEMENTS 公开/授权日:2007-07-19
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