Non-volatile memory device with controlled application of supply voltage
    1.
    发明授权
    Non-volatile memory device with controlled application of supply voltage 有权
    具有受控应用电源电压的非易失性存储器件

    公开(公告)号:US07684277B2

    公开(公告)日:2010-03-23

    申请号:US11613949

    申请日:2006-12-20

    IPC分类号: G11C5/14

    CPC分类号: G11C17/18 G11C5/14

    摘要: Embodiments of the invention provide a memory device comprising a non-volatile memory element, a read-out circuit for reading out an item of memory information stored in the memory element, a switching unit, by means of which a supply voltage can be applied to the read-out circuit, and a control unit, which has the capability of controlling the switching unit in a manner dependent on the memory information stored in the memory element.

    摘要翻译: 本发明的实施例提供了一种存储器件,其包括非易失性存储元件,用于读出存储在存储元件中的存储器信息项的读出电路,开关单元,通过该开关单元可以将电源电压施加到 读出电路和控制单元,其具有以取决于存储在存储元件中的存储器信息的方式来控制切换单元的能力。

    MEMORY DEVICE COMPRISING FUSE MEMORY ELEMENTS
    2.
    发明申请
    MEMORY DEVICE COMPRISING FUSE MEMORY ELEMENTS 有权
    包含保险丝存储元件的存储器件

    公开(公告)号:US20070165466A1

    公开(公告)日:2007-07-19

    申请号:US11613949

    申请日:2006-12-20

    IPC分类号: G11C29/00

    CPC分类号: G11C17/18 G11C5/14

    摘要: The invention relates to a memory device comprising a non-volatile memory element, a read-out circuit for reading out an item of memory information stored in the memory element, a switching unit, by means of which a supply voltage can be applied to the read-out circuit, and a control unit, which has the capability of controlling the switching unit in a manner dependent on the memory information stored in the memory element.

    摘要翻译: 本发明涉及一种包括非易失性存储元件的存储器件,用于读出存储在存储元件中的存储器信息的读出电路,一个开关单元,通过该开关单元可以将电源电压施加到 读出电路和控制单元,其具有以取决于存储在存储元件中的存储器信息的方式控制切换单元的能力。