Invention Grant
US07687108B2 Methods for manufacturing stressed material and shape memory material MEMS devices
有权
制造应力材料和形状记忆材料MEMS器件的方法
- Patent Title: Methods for manufacturing stressed material and shape memory material MEMS devices
- Patent Title (中): 制造应力材料和形状记忆材料MEMS器件的方法
-
Application No.: US11367102Application Date: 2006-03-03
-
Publication No.: US07687108B2Publication Date: 2010-03-30
- Inventor: Baomin Xu , David Kirtland Fork , Michael Yu Tak Young , Eugene Michael Chow
- Applicant: Baomin Xu , David Kirtland Fork , Michael Yu Tak Young , Eugene Michael Chow
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Fay Sharpe LLP
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
Disclosed is a MEMS device which comprises at least one shape memory material such as a shape memory alloy (SMA) layer and at least one stressed material layer. Examples of such MEMS devices include an actuator, a micropump, a microvalve, or a non-destructive fuse-type connection probe. The device exhibits a variety of improved properties, for example, large deformation ability and high energy density. Also provided is a method of easily fabricating the MEMS device in the form of a cantilever-type or diaphragm-type structure.
Public/Granted literature
- US20090320992A1 METHODS FOR MANUFACTURING STRESSED MATERIAL AND SHAPE MEMORY MATERIAL MEMS DEVICES Public/Granted day:2009-12-31
Information query
IPC分类:
