发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12098710申请日： 2008-04-07
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公开(公告)号： US07687319B2公开(公告)日： 2010-03-30
- 发明人: Takao Nishimura , Kouichi Nakamura
- 申请人： Takao Nishimura , Kouichi Nakamura
- 申请人地址： JP Tokyo
- 专利权人： Fujitsu Microelectronics Limited
- 当前专利权人： Fujitsu Microelectronics Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： H01L21/50
- IPC分类号： H01L21/50 ; H01L21/48 ; H01L21/44 ; H01L23/52 ; H01L23/48 ; H01L29/40 ; H01L23/485
摘要：
The present invention provides a method for manufacturing a semiconductor device which includes at least supplying an adhesive for bonding an electronic component which has a plurality of bumps with a substrate which has a plurality of bonding pads corresponding to the bumps, to at least a portion of the substrate, between the electronic component and the substrate, flow-casting the adhesive on the substrate by a flow-casting unit, in such a manner that the expression S1/S0>1 is satisfied, where S0 is the total contact surface area with the substrate of the adhesive supplied to the substrate, and S1 is the total contact surface area with the substrate of the adhesive after the flow-casting, and curing the adhesive while making the adhesive contact with the electronic component and the substrate in a state where the bumps are abutted against the bonding pads.
公开/授权文献
- US20080188058A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2008-08-07
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