Invention Grant
- Patent Title: Method of removing residue left after plasma process
- Patent Title (中): 去除等离子体处理后残留物的方法
-
Application No.: US11307394Application Date: 2006-02-06
-
Publication No.: US07687446B2Publication Date: 2010-03-30
- Inventor: Cheng-Ming Weng , Miao-Chun Lin , Mei-Chi Wang , Jiunn-Hsiung Liao , Wei-Cheng Yang
- Applicant: Cheng-Ming Weng , Miao-Chun Lin , Mei-Chi Wang , Jiunn-Hsiung Liao , Wei-Cheng Yang
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
A method of removing the residue left after a plasma process is described. First, a substrate having at least a material layer thereon is provided. The material layer includes a metal. Then, a fluorine-containing plasma process is performed so that a residue containing the aforesaid metallic material is formed on the surface of the material layer. After that, a wet cleaning operation is performed using a cleaning agent to remove the residue. The cleaning agent is a solution containing water, a diluted hydrofluoric acid and an acid solution.
Public/Granted literature
- US20070184996A1 CLEANING AGENT AND METHOD OF REMOVING RESIDUE LEFT AFTER PLASMA PROCESS Public/Granted day:2007-08-09
Information query
IPC分类: